AP9997AGH-HF Advanced Power Electronics Corp., AP9997AGH-HF Datasheet
AP9997AGH-HF
Specifications of AP9997AGH-HF
Related parts for AP9997AGH-HF
AP9997AGH-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9997AGH-HF Halogen-Free Product BV 120V DSS R 185mΩ DS(ON TO-252(H) S Rating Units ...
Page 2
... AP9997AGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... Fig 2. Typical Output Characteristics 2 =10V G 2.0 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9997AGH-HF o 10V C 8.0V 7.0V 6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
Page 4
... AP9997AGH- =72V =96V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...