AP9995GH-HF Advanced Power Electronics Corp., AP9995GH-HF Datasheet

AP9995GH-HF

Manufacturer Part Number
AP9995GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9995GH-HF

Vds
90V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
240
Qg (nc)
8
Qgs (nc)
3
Qgd (nc)
3.3
Id(a)
7
Pd(w)
20.8
Configuration
Single N
Package
TO-252
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Lower Gate Chage
▼ ▼ ▼ ▼ Fast Switching Characteristic
▼ ▼ ▼ ▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
The Advanced Power MOSFETs from APEC provide the
best combination of fast switching, ruggedized device design, low on-
designer with the best combination of fast switching,
resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9995GJ) is
available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
c
c
Symbol
Symbol
=25℃
=100℃
c
A
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
20.8
+20
AP9995GH/J-HF
4.4
G
90
15
DS(ON)
7
2
G
D
DSS
Value
D
S
62.5
110
6.0
S
TO-252(H)
TO-251(J)
240mΩ
201108171
Units
Units
℃/W
℃/W
℃/W
90V
7A
W
W
V
V
A
A
A
1

Related parts for AP9995GH-HF

AP9995GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP9995GH/J-HF Halogen-Free Product BV 90V DSS R 240mΩ DS(ON TO-251( ...

Page 2

... AP9995GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 2.4 2.0 1.6 1.2 0.8 0.4 -50 100 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA D 1 0.8 0.4 0.0 2 -50 Fig 6. Gate Threshold Voltage v.s. AP9995GH/J-HF 10V o T =150 C C 9.0V 8.0V 7.0V V =6. Drain-to-Source Voltage ( 100 Junction Temperature ( ...

Page 4

... AP9995GH/J- = =45V =54V DS V =72V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON = Single Pulse Total Power Dissipation 0.1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords