AP94T07GH-HF Advanced Power Electronics Corp., AP94T07GH-HF Datasheet

AP94T07GH-HF

Manufacturer Part Number
AP94T07GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP94T07GH-HF

Vds
75V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8
Qg (nc)
58
Qgs (nc)
14
Qgd (nc)
29
Id(a)
75
Pd(w)
125
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP94T07GJ) is
available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
c
c
Symbol
Symbol
=25℃
=100℃
c
A
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
4
GS
GS
G
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
4
-55 to 175
-55 to 175
AP94T07GH/J-HF
Rating
BV
R
I
D
+20
300
125
2.4
G
75
75
58
DS(ON)
G
D
DSS
Value
D
S
62.5
110
1.2
S
TO-252(H)
TO-251(J)
201104282
8mΩ
Units
Units
℃/W
℃/W
℃/W
75V
75A
W
W
V
V
A
A
A
1

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AP94T07GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V Parameter AP94T07GH/J-HF Halogen-Free Product BV 75V DSS R 8mΩ DS(ON) I 75A TO-251( TO-252(H) ...

Page 2

... AP94T07GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 200 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 0 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP94T07GH/J-HF 10V o T =175 C C 9.0V 8.0V 7.0V V =6.0V G 4.0 6.0 8.0 10.0 12.0 , Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 200 o ...

Page 4

... AP94T07GH/J- =40A =40V DS V =45V =60V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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