AP09N10GP-HF Advanced Power Electronics Corp., AP09N10GP-HF Datasheet

AP09N10GP-HF

Manufacturer Part Number
AP09N10GP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP09N10GP-HF

Vds
100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
300
Rds(on) / Max(m?) Vgs@4.5v
600
Qg (nc)
5.5
Qgs (nc)
1.2
Qgd (nc)
2.2
Id(a)
4.4
Pd(w)
12.5
Configuration
Single N
Package
TO-220
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Lower Gate Charge
▼ ▼ ▼ ▼ Fast Switching Characteristic
▼ ▼ ▼ ▼ Halogen Free & RoHS Compliant Product
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
12.5
100
+20
S
4.4
2.8
12
DS(ON)
AP09T10GP-HF
2
DSS
Value
10
62
TO-220(P)
300mΩ
201110071
100V
4.4A
Units
Units
℃/W
℃/W
W
W
V
V
A
A
A
1

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AP09N10GP-HF Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ ▼ ▼ ▼ Simple Drive Requirement ▼ ▼ ▼ ▼ Lower Gate Charge ▼ ▼ ▼ ▼ Fast Switching Characteristic ▼ ▼ ▼ ▼ Halogen Free & RoHS Compliant Product Description Advanced Power MOSFETs from ...

Page 2

AP09T10GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source ...

Page 3

Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 700 I =1. = 600 500 400 300 ...

Page 4

AP09T10GP- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited ...

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