AP09T10GK-HF Advanced Power Electronics Corp., AP09T10GK-HF Datasheet

AP09T10GK-HF

Manufacturer Part Number
AP09T10GK-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP09T10GK-HF

Vds
100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
300
Rds(on) / Max(m?) Vgs@4.5v
600
Qg (nc)
5
Qgs (nc)
1.1
Qgd (nc)
1.7
Id(a)
2.1
Pd(w)
2.78
Configuration
Single N
Package
SO-223
▼ Simple Drive Requirement
▼ Lower Gate Chage
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
The Advanced Power MOSFETs from APEC provide the
best combination of fast switching, ruggedized device design, low on-
designer with the best combination of fast switching,
resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
-55 to 150
-55 to 150
SOT-223
Rating
BV
R
I
D
2.78
100
+20
2.4
1.9
10
AP09T10GK-HF
DS(ON)
D
DSS
Value
45
Preliminary
G
D
20110824pre
300mΩ
S
100V
2.4A
Units
Units
℃/W
W
V
V
A
A
A
1

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AP09T10GK-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Maximum Thermal Resistance, Junction-ambient Rthj-a Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter 3 AP09T10GK-HF Preliminary BV 100V DSS R 300mΩ DS(ON SOT-223 G Rating Units 100 V + ...

Page 2

... AP09T10GK-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

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