AP72T12GP-HF Advanced Power Electronics Corp., AP72T12GP-HF Datasheet
AP72T12GP-HF
Specifications of AP72T12GP-HF
Related parts for AP72T12GP-HF
AP72T12GP-HF Summary of contents
Page 1
... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP72T12GP-HF Halogen-Free Product BV 120V DSS R 22.5mΩ DS(ON) I 52A D G TO-220( Rating Units 120 ...
Page 2
... AP72T12GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... D V =10V G 2.0 1.6 1.2 0.8 0.4 -50 100 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP72T12GP- 10V 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...
Page 4
... AP72T12GP- =30A D V =96V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...