AP20N15AGP-HF Advanced Power Electronics Corp., AP20N15AGP-HF Datasheet

AP20N15AGP-HF

Manufacturer Part Number
AP20N15AGP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP20N15AGP-HF

Vds
150V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
100
Rds(on) / Max(m?) Vgs@4.5v
110
Id(a)
20.5
Pd(w)
89.2
Configuration
single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power through hold applications. The low thermal resistance and low
package cost contribute to the world wide papular package.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
D
-55 to 150
-55 to 150
AP20N15AGP-HF
S
Rating
BV
R
I
D
20.5
89.2
150
+20
13
80
DS(ON)
DSS
Value
1.4
62
TO-220(P)
100mΩ
201202211
20.5A
150V
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP20N15AGP-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP20N15AGP-HF Halogen-Free Product BV 150V DSS R 100mΩ DS(ON) I 20. TO-220( Rating Units 150 ...

Page 2

... AP20N15AGP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =10A D V =10V G 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 2.0 I =250uA D 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP20N15AGP-HF o 10V C 7.0V 6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 Junction Temperature ( ...

Page 4

... AP20N15AGP- =14A D V =120V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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