AP09N20BGH-HF Advanced Power Electronics Corp., AP09N20BGH-HF Datasheet
AP09N20BGH-HF
Specifications of AP09N20BGH-HF
Related parts for AP09N20BGH-HF
AP09N20BGH-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP09N20BGH-HF Halogen-Free Product BV 200V DSS R 460mΩ DS(ON TO-252(H) Rating Units ...
Page 2
... AP09N20BGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... Fig 2. Typical Output Characteristics 2 =10V GS 2.4 2 1.6 1.2 0.8 0.4 0 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP09N20BGH-HF 10V o C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
Page 4
... AP09N20BGH- = =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...