AP09N20H-HF Advanced Power Electronics Corp., AP09N20H-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP09N20H-HF

Manufacturer Part Number
AP09N20H-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP09N20H-HF

Vds
200V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
380
Qg (nc)
23
Qgs (nc)
4
Qgd (nc)
13
Id(a)
8.6
Pd(w)
69
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
▼ RoHS Compliant
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
G
@ 10V
@ 10V
2
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.55
200
+30
AP09N20H/J-HF
8.6
5.5
8.6
36
69
40
G
DS(ON)
DSS
D S
Value
110
1.8
G
D S
TO-252(H)
TO-251(J)
380mΩ
200809112
200V
8.6A
Units
W/℃
℃/W
℃/W
Unit
W
mJ
V
V
A
A
A
A
1

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AP09N20H-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N20H/J-HF Halogen-Free Product BV 200V DSS R 380mΩ DS(ON TO-252( TO-251(J) Rating ...

Page 2

... AP09N20H/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V GS 2.4 2 1.6 1.2 0.8 0.4 0 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature = 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP09N20H/J-HF 10V o C 8.0V 7.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...

Page 4

... AP09N20H/J- =8. =100V DS V =120V DS V =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 09N20H YWWSSS 0.127~0.381 C Part LOGO Date Code (YWWSSS) If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 09N20J LOGO YWWSSS Part Number Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence If last "S" is numerical letter : Rohs product If last " ...

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