AP18N20GH-HF Advanced Power Electronics Corp., AP18N20GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP18N20GH-HF

Manufacturer Part Number
AP18N20GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP18N20GH-HF

Vds
200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
170
Qg (nc)
19
Qgs (nc)
5
Qgd (nc)
6
Id(a)
18
Pd(w)
89
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GJ)
are available for low-profile applications.
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
3
Parameter
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
AP18N20GH/J-HF
Rating
BV
R
I
D
± 20
200
9.5
0.7
18
60
89
G
DS(ON)
2
DSS
D S
Value
62.5
110
1.4
G D
S
TO-252(H)
TO-251(J)
170mΩ
201006224
200V
Units
W/℃
℃/W
℃/W
℃/W
18A
Unit
W
W
V
V
A
A
A
1

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AP18N20GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP18N20GH/J-HF Halogen-Free Product BV 200V D DSS R 170mΩ DS(ON) I 18A TO-252(H) G ...

Page 2

... AP18N20GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient /ΔT ΔBV DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge ...

Page 3

... I = =10V 2 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 1.3 1.1 o 0.9 C 0.7 0.5 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP18N20GH/J-HF 16V o 12V C 10V 8. . Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP18N20GH/J- =10A =100V DS V =130V DS V =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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