Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP18N20GP-HF

Manufacturer Part NumberAP18N20GP-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP18N20GP-HF datasheet
 


Specifications of AP18N20GP-HF

Vds200VVgs±20V
Rds(on) / Max(m?) Vgs@10v170Qg (nc)19
Qgs (nc)5Qgd (nc)6
Id(a)18Pd(w)89
ConfigurationSingle NPackageTO-220
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (103Kb)Embed
Next
Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GS)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current, V
D
C
I
@T
=100℃
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP18N20GS/P-HF
Halogen-Free Product
BV
200V
DSS
R
170mΩ
DS(ON)
I
18A
D
G
TO-220(P)
D
S
G
D
TO-263(S)
S
Rating
Units
200
V
+20
V
18
A
9.5
A
60
A
89
W
0.7
W/℃
-55 to 150
-55 to 150
Value
Units
1.4
℃/W
3
40
℃/W
62
℃/W
201001113
1

AP18N20GP-HF Summary of contents

  • Page 1

    Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ...

  • Page 2

    AP18N20GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

  • Page 3

    Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 240 210 180 150 120 2 4 ...

  • Page 4

    AP18N20GS/P- 100 130 160 Total Gate Charge (nC) G ...