AP18N20GP-HF Advanced Power Electronics Corp., AP18N20GP-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP18N20GP-HF

Manufacturer Part Number
AP18N20GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP18N20GP-HF.pdf (4 pages)

Specifications of AP18N20GP-HF

Vds
200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
170
Qg (nc)
19
Qgs (nc)
5
Qgd (nc)
6
Id(a)
18
Pd(w)
89
Configuration
Single N
Package
TO-220
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GS)
are available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 150
-55 to 150
3
AP18N20GS/P-HF
G
Rating
BV
R
I
D
200
+20
9.5
0.7
18
60
89
DS(ON)
D
DSS
S
G
Value
1.4
40
62
D
S
TO-220(P)
TO-263(S)
170mΩ
201001113
200V
Units
W/℃
Units
℃/W
℃/W
℃/W
18A
W
℃
℃
V
V
A
A
A
1

Related parts for AP18N20GP-HF

Image
Part Number
Description
Manufacturer
Datasheet
Request R
AP4800TH
Part Number:
AP4800TH
Description:
Manufacturer:
Advanced Power Electronics Corp.
4503AGM
Part Number:
4503AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
4835GM
Part Number:
4835GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
4957AGM
Part Number:
4957AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9468GM
Part Number:
9468GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9474GM
Part Number:
9474GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9467GM
Part Number:
9467GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9962AGM
Part Number:
9962AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9985GM
Part Number:
9985GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9412GM
Part Number:
9412GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
AP9412GM
Part Number:
AP9412GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9412BGM
Part Number:
9412BGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9685GM
Part Number:
9685GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
AP6679GM
Part Number:
AP6679GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
6679GM
Part Number:
6679GM
Description:
Manufacturer:
Advanced Power Electronics Corp.

AP18N20GP-HF Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ...

Page 2

AP18N20GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 240 210 180 150 120 2 4 ...

Page 4

AP18N20GS/P- 100 130 160 Total Gate Charge (nC) G ...

Related keywords