AP05N20GH-HF Advanced Power Electronics Corp., AP05N20GH-HF Datasheet

AP05N20GH-HF

Manufacturer Part Number
AP05N20GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP05N20GH-HF

Vds
200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
600
Rds(on) / Max(m?) Vgs@4.5v
620
Qg (nc)
30
Qgs (nc)
3
Qgd (nc)
11.2
Id(a)
5.8
Pd(w)
44.6
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP05N20GJ) are
available for low-profile applications.
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
AP05N20GH/J-HF
Rating
BV
R
I
D
44.6
G
200
+20
5.8
3.7
20
DS(ON)
G
2
D
DSS
D
S
Value
62.5
110
2.8
S
TO-252(H)
TO-251(J)
600mΩ
201110062
200V
5.8A
Units
℃/W
℃/W
℃/W
Unit
W
W
V
V
A
A
A
1

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AP05N20GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP05N20GH/J-HF Halogen-Free Product BV 200V D DSS R 600mΩ DS(ON ...

Page 2

... AP05N20GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V GS 2.4 2 1.6 1.2 0.8 0.4 0 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I =1mA D 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP05N20GH/J-HF 10V o C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP05N20GH/J- = =100V =120V DS V =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area 10 limited by R DS(ON = Single Pulse Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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