AP02N60I Advanced Power Electronics Corp., AP02N60I Datasheet

AP02N60I

Manufacturer Part Number
AP02N60I
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP02N60I

Vds
600V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
8000
Qg (nc)
14
Qgs (nc)
2
Qgd (nc)
8.5
Id(a)
2
Pd(w)
22
Configuration
Single N
Package
TO-220CFM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP02N60I
Manufacturer:
APEC
Quantity:
229
▼ 100% Avalanche Test
▼ Fast Switching
▼ Simple Drive Requirement
V
V
I
I
I
P
E
I
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-220CFM package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
D
D
DM
AR
STG
J
DS
GS
D
AS
AR
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
G
GS
GS
@ 10V
@ 10V
2
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G D
-55 to 150
-55 to 150
Rating
BV
R
I
0.176
± 30
D
1.26
S
600
3.6
22
80
DS(ON)
2
2
2
DSS
Value
5.7
62
AP02N60I
TO-220CFM(I)
200806054
600V
Units
W/℃
℃/W
℃/W
Unit
2A
mJ
mJ
W
V
V
A
A
A
A
1

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AP02N60I Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP02N60I RoHS-compliant Product BV 600V DSS R 8Ω DS(ON TO-220CFM(I) Rating Units 600 ± ...

Page 2

... AP02N60I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 3. Normalized BV DSS Temperature 10V T =150 C 0.8 6.0V 5.5V 0.6 0.4 5.0V 0.2 V =4. Fig 2. Typical Output Characteristics 2 2 1.6 1.2 0.8 0.4 0 -50 100 150 o C) v.s. Junction Fig 4. Normalized On-Resistance AP02N60I o 10V C 6.0V 5.5V 5.0V V =4. Drain-to-Source Voltage (V) DS =1A =10V 0 50 100 Junction Temperature ( v.s. Junction Temperature 20 150 3 ...

Page 4

... AP02N60I 2.4 2 1.6 1.2 0.8 0 Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature Single Pulse 0. 100 V (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 100us 1ms 0.1 10ms 100ms 0.01 1000 10000 0.00001 Fig 8. Effective Transient Thermal Impedance ...

Page 5

... Reverse Diode 200 160 120 Fig 10. Typical Capacitance Characteristics 1.2 1.4 1.6 -50 Fig 12. Gate Threshold Voltage v.s. AP02N60I ( 100 Junction Temperature ( Junction Temperature f=1.0MHz Ciss Coss Crss 25 29 150 5 ...

Page 6

... AP02N60I Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 10V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...

Page 7

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO LOGO 20N60I YWWSSS Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence ...

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