AP02N60P Advanced Power Electronics Corp., AP02N60P Datasheet
AP02N60P
Specifications of AP02N60P
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AP02N60P Summary of contents
Page 1
... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-220 Parameter @ 10V GS @ 10V Parameter AP02N60P Pb Free Plating Product BV 600V DSS R 8Ω DS(ON Rating Units 600 ± ...
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... AP02N60P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... D V =10V -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP02N60P 10V 6. 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...
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... AP02N60P =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...