AP02N60P Advanced Power Electronics Corp., AP02N60P Datasheet

The TO-220 package is universally preferred for all commercial-industrial applications

AP02N60P

Manufacturer Part Number
AP02N60P
Description
The TO-220 package is universally preferred for all commercial-industrial applications
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP02N60P

Vds
600V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8000
Qg (nc)
14
Qgs (nc)
2
Qgd (nc)
8.5
Id(a)
2
Pd(w)
39
Configuration
Single N
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP02N60P
Manufacturer:
APEC
Quantity:
18 866
Part Number:
AP02N60P
Manufacturer:
APEC
Quantity:
447
Part Number:
AP02N60P-A
Manufacturer:
APEC
Quantity:
2 000
▼ ▼ ▼ ▼ Repetitive Avalanche Rated
▼ ▼ ▼ ▼ Fast Switching
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ RoHS Compliant
V
V
I
I
I
P
E
I
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,DC-AC
converters for telecom, industrial and consumer environment.
STG
J
DS
GS
D
AS
AR
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
1
G
D S
Parameter
GS
GS
@ 10V
@ 10V
2
TO-220
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
1.26
0.31
600
±20
130
G
39
DS(ON)
2
6
2
2
DSS
Value
3.2
62
AP02N60P
D
S
200721052-1/4
600V
Units
W/℃
Units
℃/W
℃/W
2A
W
mJ
mJ
V
V
A
A
A
A

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AP02N60P Summary of contents

Page 1

... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-220 Parameter @ 10V GS @ 10V Parameter AP02N60P Pb Free Plating Product BV 600V DSS R 8Ω DS(ON Rating Units 600 ± ...

Page 2

... AP02N60P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =10V -50 150 o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP02N60P 10V 6. 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP02N60P =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...

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