AP02N90P Advanced Power Electronics Corp., AP02N90P Datasheet
AP02N90P
Specifications of AP02N90P
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AP02N90P Summary of contents
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... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G TO-220 D S Parameter @ 10V GS @ 10V Parameter AP02N90P RoHS-compliant Product BV 900V DSS R 7.2Ω DS(ON Rating Units 900 +30 1.9 1 ...
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... AP02N90P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 =10V G 2.0 1.6 1.2 0.8 0.4 0.0 150 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.2 o =25 C 0.8 0.4 1 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. AP02N90P 10V o C 8.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 o ,Junction Temperature ( ...
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... AP02N90P 1 180 360 540 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10.00 Operation in this area limited by R DS(ON) 1. Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...