AP05N50P Advanced Power Electronics Corp., AP05N50P Datasheet

The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness

AP05N50P

Manufacturer Part Number
AP05N50P
Description
The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP05N50P

Vds
500V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1400
Qg (nc)
19
Qgs (nc)
4.6
Qgd (nc)
6.3
Id(a)
5
Pd(w)
73.5
Configuration
Single N
Package
TO-220
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 and package is widely preferred for commercial-industrial
applications. The good thermal performance and low package cost of the
TO-220 Contribute to its wide industry application.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
2
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
73.5
0.59
500
±20
5.0
2.8
18
45
G
DS(ON)
3
DSS
D
Value
1.7
S
62
AP05N50P
TO-220(P)
201022072-1/4
1.4Ω
500V
5.0A
Units
W/℃
℃/W
℃/W
Unit
W
mJ
V
V
A
A
A
A

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AP05N50P Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP05N50P RoHS-compliant Product BV 500V D DSS R 1.4Ω DS(ON TO-220( Rating ...

Page 2

... AP05N50P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 3 I =2. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.5 0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP05N50P 10V . Drain-to-Source Voltage ( 100 Junction Temperature ( ...

Page 4

... AP05N50P 16 I =3. =260V =320V DS V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 05N50P LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.25 4.48 b 0.65 0. 1.15 1.38 c 0.40 0.50 c1 1.00 1.20 E 9.70 10.00 E1 --- --- ...

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