AP07N70CI-H Advanced Power Electronics Corp., AP07N70CI-H Datasheet
AP07N70CI-H
Specifications of AP07N70CI-H
Related parts for AP07N70CI-H
AP07N70CI-H Summary of contents
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... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP07N70CI-H RoHS-compliant Product BV 700V DSS R 1.4Ω DS(ON TO-220CFM(I) Rating Units 700 + ...
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... AP07N70CI-H Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 3 I =3. =10V -50 150 o C) Fig 4. Normalized On-Resistance -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP07N70CI-H 10V o C 6.0V 5.5V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...
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... AP07N70CI = =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 1 0.1 ℃ T =25 c Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig9. Maximum Safe Operating Area V DS 90% 10 ...