AP08N60I-HF

Manufacturer Part NumberAP08N60I-HF
ManufacturerAdvanced Power Electronics Corp.
AP08N60I-HF datasheet
 


Specifications of AP08N60I-HF

Vds600VVgs±30V
Rds(on) / Max(m?) Vgs@10v850Qg (nc)67
Qgs (nc)9Qgd (nc)26
Id(a)8Pd(w)37
ConfigurationSingle NPackageTO-220CFM
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Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
Description
AP08N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching,ruggedized design and cost-effectiveness.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current, V
D
C
I
@T
=100℃
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
AP08N60I-HF
Halogen-Free Product
BV
600V
DSS
R
0.85Ω
DS(ON)
I
8A
D
G
D
S
TO-220CFM(I)
Rating
Units
600
V
+30
V
8
A
4.3
A
32
A
37
W
-55 to 150
-55 to 150
Value
Units
℃/W
3.4
℃/W
65
201001281
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AP08N60I-HF Summary of contents

  • Page 1

    ... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 AP08N60I-HF Halogen-Free Product BV 600V DSS R 0.85Ω DS(ON TO-220CFM(I) Rating Units 600 ...

  • Page 2

    ... AP08N60I-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics =10V 150 - Fig 4. Normalized On-Resistance 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP08N60I-HF o 10V C 5.0V 4.5V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( v.s. Junction Temperature 0 50 100 o T ...

  • Page 4

    ... AP08N60I- = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...