AP08N60I-HF Advanced Power Electronics Corp., AP08N60I-HF Datasheet
AP08N60I-HF
Specifications of AP08N60I-HF
Related parts for AP08N60I-HF
AP08N60I-HF Summary of contents
Page 1
... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 AP08N60I-HF Halogen-Free Product BV 600V DSS R 0.85Ω DS(ON TO-220CFM(I) Rating Units 600 ...
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... AP08N60I-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics =10V 150 - Fig 4. Normalized On-Resistance 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP08N60I-HF o 10V C 5.0V 4.5V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( v.s. Junction Temperature 0 50 100 o T ...
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... AP08N60I- = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...