AP09N50I Advanced Power Electronics Corp., AP09N50I Datasheet
AP09N50I
Specifications of AP09N50I
Related parts for AP09N50I
AP09N50I Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N50I RoHS-compliant Product BV 500V DSS R 0.75Ω DS(ON TO-220CFM(I) S Rating Units 500 + ...
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... AP09N50I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP09N50I 9.0 V 7 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP09N50I =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area 10 limited by R DS(ON Single Pulse 0. ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...