AP09N50I

Manufacturer Part NumberAP09N50I
ManufacturerAdvanced Power Electronics Corp.
AP09N50I datasheet
 


Specifications of AP09N50I

Vds500VVgs±30V
Rds(on) / Max(m?) Vgs@10v750Qg (nc)32
Qgs (nc)7Qgd (nc)14
Id(a)9Pd(w)36.8
ConfigurationSingle NPackageTO-220CFM
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Advanced Power
Electronics Corp.
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
E
Single Pulse Avalanche Energy
AS
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
2
Parameter
AP09N50I
RoHS-compliant Product
BV
500V
DSS
R
0.75Ω
DS(ON)
I
9A
D
G
D
TO-220CFM(I)
S
Rating
Units
500
+30
9
5.6
36
36.8
W
18
mJ
-55 to 150
-55 to 150
Value
Units
℃/W
3.4
℃/W
65
201107223
V
V
A
A
A
1

AP09N50I Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N50I RoHS-compliant Product BV 500V DSS R 0.75Ω DS(ON TO-220CFM(I) S Rating Units 500 + ...

  • Page 2

    ... AP09N50I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... D V =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP09N50I 9.0 V 7 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 Junction Temperature ( ...

  • Page 4

    ... AP09N50I =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area 10 limited by R DS(ON Single Pulse 0. ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...