AP09N70I-A Advanced Power Electronics Corp., AP09N70I-A Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP09N70I-A

Manufacturer Part Number
AP09N70I-A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP09N70I-A

Vds
650V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
750
Qg (nc)
44
Qgs (nc)
11
Qgd (nc)
12
Id(a)
9
Pd(w)
42
Configuration
Single N
Package
TO-220CFM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP09N70I-A
Quantity:
45 000
▼ 100% Avalanche Test
▼ Fast Switching
▼ Simple Drive Requirement
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
G
GS
GS
@ 10V
@ 10V
2
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
S
D
0.34
40.5
+30
650
40
42
DS(ON)
9
5
9
DSS
Value
65
3
AP09N70I-A
TO-220CFM(I)
200906254
0.75Ω
650V
Units
W/℃
Units
℃/W
℃/W
9A
W
mJ
V
V
A
A
A
A
1

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AP09N70I-A Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N70I-A RoHS-compliant Product BV 650V DSS R 0.75Ω DS(ON TO-220CFM(I) S Rating Units 650 +30 ...

Page 2

... AP09N70I-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 3 I =4. =10V 150 - Fig 4. Normalized On-Resistance -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP09N70I-A 10V o C 6.0V 5.0V 4.5V 4.0V V =3. Drain-to-Source Voltage ( 100 o , Junction Temperature ( v.s. Junction Temperature 0 50 ...

Page 4

... AP09N70I = =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...

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