AP09N70R-A-HF Advanced Power Electronics Corp., AP09N70R-A-HF Datasheet
AP09N70R-A-HF
Specifications of AP09N70R-A-HF
Related parts for AP09N70R-A-HF
AP09N70R-A-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP09N70R-A-HF Halogen-Free Product BV 650V DSS R 0.75Ω DS(ON TO-262(R) S Rating Units 650 V +30 ...
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... AP09N70R-A-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 3 I =4. =10V -50 150 C) Fig 4. Normalized On-Resistance 3.5 3.1 2 2.3 1.9 1.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP09N70R-A-HF 10V o C 6.0V 5.0V 4.5V 4. Drain-to-Source Voltage ( 100 Junction Temperature ( v.s. Junction Temperature 0 50 100 ...
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... AP09N70R-A- = =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...