AP10N70I-A Advanced Power Electronics Corp., AP10N70I-A Datasheet

AP10N70I-A

Manufacturer Part Number
AP10N70I-A
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP10N70I-A

Vds
650V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
620
Qg (nc)
36
Qgs (nc)
8.3
Qgd (nc)
11.5
Id(a)
10
Pd(w)
31.3
Configuration
Single N
Package
TO-220CFM
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
2
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
± 30
31.3
650
6.8
10
40
50
DS(ON)
D
DSS
S
Value
65
4
AP10N70I-A
TO-220CFM(I)
0.62Ω
200810311
650V
Units
℃/W
℃/W
10A
Unit
W
mJ
V
V
A
A
A
1

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AP10N70I-A Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP10N70I-A RoHS-compliant Product BV 650V D DSS R 0.62Ω DS(ON) I 10A TO-220CFM(I) S Rating ...

Page 2

... AP10N70I-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D 2.8 V =10V G 2.4 2 1.6 1.2 0.8 0 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP10N70I 10V 6 .0V 5 .0V 4. Drain-to-Source Voltage ( 100 125 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP10N70I =10A =320V DS V =400V DS V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO A 10N70I YWWSSS YWWSSS Option Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS: ...

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