AP11N50I Advanced Power Electronics Corp., AP11N50I Datasheet
AP11N50I
Specifications of AP11N50I
Related parts for AP11N50I
AP11N50I Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP11N50I RoHS-compliant Product BV 500V DSS R 0.62Ω DS(ON) I 11A TO-220CFM(I) S Rating Units 500 + ...
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... AP11N50I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... I = =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP11N50I 7.0 V 6 4.5V G 8.0 12.0 16.0 20.0 24 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( Junction Temperature 28 ...
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... AP11N50I = =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...