AP16N50I-HF Advanced Power Electronics Corp., AP16N50I-HF Datasheet
AP16N50I-HF
Specifications of AP16N50I-HF
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AP16N50I-HF Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP16N50I-HF Halogen-Free Product BV 500V DSS R 0.4Ω DS(ON) I 16A TO-220CFM(I) S Rating Units 500 ...
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... AP16N50I-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.8 I =6. =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP16N50I-HF 16V C 12V 10V 7.0V V =6.0V G 4.0 8.0 12.0 16.0 20.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( C ) ...
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... AP16N50I- =16A D V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...