AP16N50W Advanced Power Electronics Corp., AP16N50W Datasheet
AP16N50W
Specifications of AP16N50W
Related parts for AP16N50W
AP16N50W Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP16N50W RoHS-compliant Product BV 500V DSS R 0.4Ω DS(ON) I 16A D G TO- Rating Units 500 +30 ...
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... AP16N50W Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2.8 I =6. =10V G 2.4 2.0 1.6 1.2 0.8 0.4 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 1 1.1 0.9 0.7 0.5 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP16N50W 16V o C 12V 10V 7. 6.0V G 8.0 12.0 16.0 20.0 24.0 28.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP16N50W =16A D V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...