AP2761P-A Advanced Power Electronics Corp., AP2761P-A Datasheet
AP2761P-A
Specifications of AP2761P-A
Related parts for AP2761P-A
AP2761P-A Summary of contents
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... Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP2761P-A Pb Free Plating Product BV 650V DSS R 1Ω DS(ON) I 10A D G TO-220 D S Rating Units 650 ± ...
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... AP2761P-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 2.4 I =3. =10V G 1.8 1.2 0.6 0 -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.1 1.3 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2761P-A o 10V C 6.0V 5.5V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...
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... AP2761P =10A =330V DS V =410V DS V =520V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...