AP2761S-A-HF Advanced Power Electronics Corp., AP2761S-A-HF Datasheet
AP2761S-A-HF
Specifications of AP2761S-A-HF
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AP2761S-A-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP2761S-A-HF Halogen-Free Product BV 650V DSS R 1Ω DS(ON) I 10A TO-263(S) Rating Units 650 ...
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... AP2761S-A-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 3 I =3. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1 0.8 0.6 0.4 -50 1.1 1.3 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2761S-A-HF o 10V C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...
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... AP2761S-A- =10A =330V DS V =410V DS V =520V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area 10 limited by R DS(ON = Single Pulse 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...