AP3990I-HF Advanced Power Electronics Corp., AP3990I-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP3990I-HF

Manufacturer Part Number
AP3990I-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP3990I-HF

Vds
600V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
600
Qg (nc)
34
Qgs (nc)
11
Qgd (nc)
11
Id(a)
10
Pd(w)
31.3
Configuration
Complementary N-P
Package
TO-220CFM
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
2
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
+ 30
31.3
600
6.5
10
40
50
10
DS(ON)
D
DSS
S
Value
65
4
AP3990I-HF
TO-220CFM(I)
201008301
0.6Ω
600V
Units
℃/W
℃/W
10A
Unit
W
mJ
V
V
A
A
A
A
1

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AP3990I-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP3990I-HF Halogen-Free Product BV 600V D DSS R 0.6Ω DS(ON) I 10A TO-220CFM(I) S Rating ...

Page 2

... AP3990I-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... G 2.4 2 1.6 1.2 0.8 0.4 0 -50 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3990I-HF 10V 7 . Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o , Junction Temperature ( ...

Page 4

... AP3990I- =10A D V =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...

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