IRF840I

Manufacturer Part NumberIRF840I
ManufacturerAdvanced Power Electronics Corp.
IRF840I datasheet
 


Specifications of IRF840I

Vds500VVgs±20V
Rds(on) / Max(m?) Vgs@10v850Qg (nc)45
Qgs (nc)7Qgd (nc)25
Id(a)8Pd(w)35
ConfigurationSingle NPackageTO-220CFM
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Advanced Power
Electronics Corp.
▼ Ease of Paralleling
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
Description
APEC MOSFET provide the power designer with the best combination
of fast switching , lower on-resistance and reasonable
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current, V
D
C
I
@T
=100℃
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
Parameter
@ 10V
GS
@ 10V
GS
1
2
Parameter
IRF840I
RoHS-compliant Product
BV
500V
D
DSS
R
0.85Ω
DS(ON)
I
8A
D
S
G
D
TO-220CFM(I)
S
Rating
Units
500
±20
8
5.1
32
35
W
320
mJ
8
-55 to 150
-55 to 150
Value
Unit
3.6
℃/W
65
℃/W
201024071-1/4
V
V
A
A
A
A

IRF840I Summary of contents

  • Page 1

    ... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter IRF840I RoHS-compliant Product BV 500V D DSS R 0.85Ω DS(ON TO-220CFM(I) S Rating ...

  • Page 2

    ... IRF840I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 3 I =4. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. IRF840I 10V . Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...

  • Page 4

    ... IRF840I =100V DS V =250V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 0 Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO LOGO IRF840I YWWSSS A A SYMBOLS φ e 1.All Dimensions Are in Millimeters 2.Dimension Does Not Include Mold Protrusions. ...