IRF840 Advanced Power Electronics Corp., IRF840 Datasheet

APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost

IRF840

Manufacturer Part Number
IRF840
Description
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of IRF840

Vds
500V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
850
Qg (nc)
45
Qgs (nc)
7
Qgd (nc)
25
Id(a)
8
Pd(w)
125
Configuration
Single N
Package
TO-220

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▼ Ease of Paralleling
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
2
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
D
S
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
500
±20
125
320
5.1
32
G
DS(ON)
8
1
8
DSS
D
Value
1.0
S
62
TO-220(P)
IRF840
200430071-1/4
0.85Ω
500V
Units
W/℃
℃/W
℃/W
Unit
8A
W
mJ
V
V
A
A
A
A

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IRF840 Summary of contents

Page 1

... J Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter IRF840 RoHS-compliant Product BV 500V D DSS R 0.85Ω DS(ON TO-220( Rating Units 500 ± ...

Page 2

... IRF840 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 3 I =4. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. IRF840 10V . Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...

Page 4

... IRF840 =100V DS V =250V =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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