AP04N70BS-H-HF Advanced Power Electronics Corp., AP04N70BS-H-HF Datasheet
AP04N70BS-H-HF
Specifications of AP04N70BS-H-HF
Related parts for AP04N70BS-H-HF
AP04N70BS-H-HF Summary of contents
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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP04N70BS-H-HF Halogen-Free Product BV 700V DSS R 2.4Ω DS(ON TO-263(S) Rating Units 700 V ...
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... AP04N70BS-H-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... D V =10V 150 -50 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I =250uA D 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP04N70BS-H-HF 10V o C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...
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... AP04N70BS-H- = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...