AP05N50EI-HF Advanced Power Electronics Corp., AP05N50EI-HF Datasheet
AP05N50EI-HF
Specifications of AP05N50EI-HF
Related parts for AP05N50EI-HF
AP05N50EI-HF Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V Parameter AP05N50EI-HF Halogen-Free Product BV 500V D DSS R 1.6Ω DS(ON TO-220CFM(I) S Rating ...
Page 2
... AP05N50EI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... I = =10V -50 120 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 I =250uA 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP05N50EI-HF 10V o C 8.0V 7.0V 6.0V V =5. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...
Page 4
... AP05N50EI- = =400V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0. Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...