AP03N90P-HF Advanced Power Electronics Corp., AP03N90P-HF Datasheet

AP03N90P-HF

Manufacturer Part Number
AP03N90P-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP03N90P-HF

Vds
900V
Vgs
±30V
Rds(on) / Max(m?) Vgs@10v
5200
Qg (nc)
18
Qgs (nc)
3.5
Qgd (nc)
7
Id(a)
3
Pd(w)
83.3
Configuration
Single N
Package
TO-220
▼ 100% Avalanche Test
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
AP03N90 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
The TO-220 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-
AC converters and high current high speed switching circuits.
D
D
DM
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
S
D
1.89
83.3
+30
900
4.5
10
DS(ON)
3
DSS
AP03N90P-HF
Value
1.5
62
TO-220(P)
201101171
900V
5.2Ω
Units
Units
℃/W
℃/W
3A
W
mJ
V
V
A
A
A
1

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AP03N90P-HF Summary of contents

Page 1

... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP03N90P-HF Halogen-Free Product BV 900V DSS R 5.2Ω DS(ON TO-220( Rating Units 900 ...

Page 2

... AP03N90P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V 150 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP03N90P-HF o 10V C 7.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP03N90P- = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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