AP2761I-H-HF Advanced Power Electronics Corp., AP2761I-H-HF Datasheet
AP2761I-H-HF
Specifications of AP2761I-H-HF
Related parts for AP2761I-H-HF
AP2761I-H-HF Summary of contents
Page 1
... Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP2761I-H-HF Halogen-Free Product BV 700V DSS R 1.3Ω DS(ON TO-220CFM(I) Rating Units 700 ...
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... AP2761I-H-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics =10V 150 - Fig 4. Normalized On-Resistance 1.5 1 1.1 0.9 0.7 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP2761I-H-HF 10V o 7.0V C 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( v.s. Junction Temperature 0 50 100 ...
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... AP2761I-H- = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0. 100 V , Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...