AP20GT60ASI-HF

Manufacturer Part NumberAP20GT60ASI-HF
ManufacturerAdvanced Power Electronics Corp.
AP20GT60ASI-HF datasheets

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Specifications of AP20GT60ASI-HF

Bvces600VVgs±20V
Vce(sat) / Max(v) Vgs@15v2200Icp(a)25
Pd(w)33ConfigurationSingle N
PackageTO-220CFM  
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Advanced Power
Electronics Corp.
Features
▼ High Speed Switching
▼ Low Saturation Voltage
V
=1.7V@I
=12A
CE(sat),typ.
C
▼ RoHS Compliant Product
Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GE
o
I
@T
=25
C
Collector Current
C
C
o
I
@T
=100
C
Collector Current
C
C
I
Pulsed Collector Current
CM
o
I
@T
=100
C
Diode Forward Current
F
C
I
Diode Pulse Forward Current
FM
o
P
@T
=25
C
Maximum Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Symbol
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode)
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@T
Symbol
Parameter
I
Gate-to-Emitter Leakage Current
GES
I
Collector-Emitter Leakage Current
CES
V
Collector-Emitter Saturation Voltage
CE(sat)
V
Collector-Emitter Saturation Voltage
CE(sat)
V
Gate Threshold Voltage
GE(th)
Q
Total Gate Charge
g
Q
Gate-Emitter Charge
ge
Q
Gate-Collector Charge
gc
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
E
Turn-On Switching Loss
on
E
Turn-Off Switching Loss
off
C
Input Capacitance
ies
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
V
FRD Forward Voltage
F
t
FRD Reverse Recovery Time
rr
Q
FRD Reverse Recovery Charge
rr
Data and specifications subject to change without notice
G
C E
TO-220CFM(I)
Parameter
1
Parameter
o
=25
C(unless otherwise specified)
j
Test Conditions
V
=+20V, V
=0V
GE
CE
V
=600V, V
=0V
CE
GE
V
=15V, I
=12A
GE
C
V
=15V, I
=25A
GE
C
V
=V
, I
=250uA
CE
GE
C
I
=20A
C
V
=480V
CC
V
=15V
GE
V
=480V,
CE
I
=20A,
c
V
=15V,
GE
R
=5Ω,
G
Inductive Load
V
=0V
GE
V
=30V
CE
f=1.0MHz
I
=8A
F
I
=8A
F
di/dt = 100 A/μs
AP20GT60ASI-HF
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
V
600V
CES
I
12A
C
C
G
E
Rating
Units
600
V
+20
V
25
A
12
A
50
A
8
A
40
A
33
W
o
-55 to 150
C
o
150
C
Value
Units
o
3.8
C/W
o
C/W
5
o
C/W
65
Min.
Typ.
Max. Units
-
-
+100
nA
-
-
1
mA
-
1.7
2.2
V
-
1.9
-
V
2
-
6
V
nC
-
95
150
-
16
-
nC
nC
-
35
-
ns
-
40
-
ns
-
20
-
ns
-
140
-
-
200
400
ns
mJ
-
0.1
-
-
1
-
mJ
pF
-
2760 4400
-
65
-
pF
pF
-
40
-
V
-
1.8
2.4
ns
-
30
-
nC
-
30
-
1
201109211

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AP20GT60ASI-HF Summary of contents

  • Page 1

    ... GE V =480V =20A =15V =5Ω, G Inductive Load V = =30V CE f=1.0MHz I = =8A F di/dt = 100 A/μs AP20GT60ASI-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR V 600V CES I 12A Rating Units 600 V + ...

  • Page 2

    ... AP20GT60ASI-HF 120 100 Collector-Emitter Voltage (V) CE Fig 1. Typical Output Characteristics 120 V =15V GE 100 = Collector-Emitter Voltage (V) CE Fig 3. Typical Saturation Voltage Characteristics =150 0.4 0.8 1 Forward Voltage (V) F Fig 5 ...

  • Page 3

    ... Fig 10. Saturation Voltage vs 1000 100 10 1 0.1 T =25 C Single Pulse 0.01 100 120 1 V Fig 12. SOA Characteristics AP20GT60ASI- Duty factor = t/T Peak thjc C 0.001 0.01 0 Pulse Width ( ...

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