SKiM606GD066HD

Manufacturer Part NumberSKiM606GD066HD
ManufacturerSEMIKRON
SKiM606GD066HD datasheet
 

Specifications of SKiM606GD066HD

Family/systemSKiM 63\/93Voltage (v)600
Current (a)600Chip-typeIGBT 3 (Trench)
CaseSKIM 63  
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SKiM606GD066HD
SKiM
®
63
Trench IGBT Modules
SKiM606GD066HD
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• V
with positive temperature
CE(sat)
coefficient
• Low inductance case
• Isolated by Al
O
DCB (Direct Copper
2
3
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x I
C
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
GD
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
CES
T
= 25 °C
I
C
s
T
= 175 °C
j
T
= 70 °C
s
I
Cnom
I
I
= 2xI
CRM
CRM
Cnom
V
GES
V
= 360 V
CC
V
≤ 15 V
T
= 150 °C
t
psc
GE
j
V
≤ 600 V
CES
T
j
Inverse diode
I
T
= 25 °C
F
s
T
= 175 °C
j
T
= 70 °C
s
I
Fnom
I
I
= 2xI
FRM
FRM
Fnom
I
t
= 10 ms, sin 180°, T
= 25 °C
p
j
FSM
T
j
Module
T
= 80 °C
I
terminal
t(RMS)
T
stg
V
AC sinus 50 Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 600 A
T
= 25 °C
V
C
CE(sat)
j
V
= 15 V
GE
T
= 150 °C
chiplevel
j
V
T
= 25 °C
j
CE0
T
= 150 °C
j
T
= 25 °C
r
j
CE
V
= 15 V
GE
T
= 150 °C
j
V
V
=V
, I
= 9.6 mA
GE(th)
GE
CE
C
I
T
= 25 °C
V
= 0 V
j
CES
GE
V
= 600 V
T
= 150 °C
CE
j
C
f = 1 MHz
ies
V
= 25 V
CE
f = 1 MHz
C
oes
V
= 0 V
GE
C
f = 1 MHz
res
Q
V
= - 8 V...+ 15 V
G
GE
T
= 25 °C
R
j
Gint
t
T
= 150 °C
d(on)
j
V
= 300 V
CC
T
= 150 °C
t
I
= 600 A
r
j
C
E
T
= 150 °C
R
= 3 
j
on
G on
R
= 5 
T
= 150 °C
t
G off
d(off)
j
di/dt
= 5500 A/µs
t
T
= 150 °C
on
j
f
di/dt
= 6200 A/µs
off
E
T
= 150 °C
off
j
R
per IGBT
th(j-s)
Rev. 3 – 14.07.2011
Values
Unit
600
V
641
A
512
A
600
A
1200
A
-20 ... 20
V
6
µs
-40 ... 175
°C
453
A
352
A
600
A
1200
A
2880
A
-40 ... 175
°C
700
A
-40 ... 125
°C
2500
V
min.
typ.
max.
Unit
1.45
1.85
V
1.70
2.10
V
0.9
1
V
0.85
0.9
V
0.9
1.4
m
1.4
2.0
m
5
5.8
6.5
V
0.1
0.3
mA
mA
36.96
nF
2.30
nF
1.10
nF
4800
nC
0.5
150
ns
120
ns
16
mJ
1400
ns
75
ns
53
mJ
0.105
K/W
1

SKiM606GD066HD Summary of contents

  • Page 1

    ... SKiM606GD066HD SKiM ® 63 Trench IGBT Modules SKiM606GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for ...

  • Page 2

    ... SKiM606GD066HD SKiM ® 63 Trench IGBT Modules SKiM606GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for ...

  • Page 3

    ... SKiM606GD066HD Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 3 – 14.07.2011 = ...

  • Page 4

    ... SKiM606GD066HD Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 3 – 14.07.2011 ...

  • Page 5

    ... SKiM606GD066HD SKIM 63 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...