SKiM606GD066HD SEMIKRON, SKiM606GD066HD Datasheet
SKiM606GD066HD
Specifications of SKiM606GD066HD
Available stocks
Related parts for SKiM606GD066HD
SKiM606GD066HD Summary of contents
Page 1
... SKiM606GD066HD SKiM ® 63 Trench IGBT Modules SKiM606GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for ...
Page 2
... SKiM606GD066HD SKiM ® 63 Trench IGBT Modules SKiM606GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for ...
Page 3
... SKiM606GD066HD Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 3 – 14.07.2011 = ...
Page 4
... SKiM606GD066HD Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 3 – 14.07.2011 ...
Page 5
... SKiM606GD066HD SKIM 63 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...