IXTP02N120P IXYS, IXTP02N120P Datasheet

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IXTP02N120P

Manufacturer Part Number
IXTP02N120P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTP02N120P

Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
0.2
Rds(on), Max, Tj=25°c, (?)
75
Ciss, Typ, (pf)
104
Qg, Typ, (nc)
4.7
Trr, Typ, (ns)
1600
Pd, (w)
33
Rthjc, Max, (k/w)
3.8
Package Style
TO-220
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-220
TO-252
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 100μA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTP02N120P
IXTY02N120P
Characteristic Values
1200
Min.
-55 ... +150
-55 ... +150
2.0
Maximum Ratings
1.13 / 10
1200
1200
0.35
3.00
±20
±30
150
300
260
0.2
0.6
0.2
40
10
33
Typ.
60
Nm/lb.in.
±50
Max.
4.0
25
75
1
V/ns
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-220 (IXTP)
TO-252 (IXTY)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Avalanche Rated
Low Package Inductance
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D S
≤ ≤ ≤ ≤ ≤ 75Ω Ω Ω Ω Ω
= 1200V
= 0.2A
G
S
D
Tab = Drain
D (Tab)
D (Tab)
= Drain
DS100201(10/09)

Related parts for IXTP02N120P

IXTP02N120P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTP02N120P IXTY02N120P Maximum Ratings 1200 = 1MΩ 1200 GS ±20 ±30 0.2 0.6 JM 0.2 40 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I = 0.5 • I 0.37 DSS D D25 3.20 0.50 Characteristic Values Min. Typ. JM 1.6 3.5 2.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP02N120P IXTY02N120P TO-220 (IXTP) Outline Max Pins Gate nC 3.8 °C/W °C/W Max. 0.2 A 0.8 A 1.3 V μs TO-252 (IXTY) Outline A μ ...

Page 3

... T = 125ºC J 140 120 100 25º 600 700 800 900 1000 -50 IXTP02N120P IXTY02N120P Fig. 2. Extended Output Characteristics @ 10V 100 150 200 V - Volts DS Fig Normalized 100mA Value vs. DS(on) D Junction Temperature ...

Page 4

... I - MilliAmperes D Fig. 10. Gate Charge V = 600V 100mA 1mA 0.0 0.5 1.0 1.5 2.0 2.5 3 NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds IXTP02N120P IXTY02N120P 40ºC J 25ºC 125ºC 250 300 350 3.5 4.0 4.5 5.0 0 IXYS REF: T_02N120P(F2)10-01-09 ...

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