IXTJ4N150 IXYS, IXTJ4N150 Datasheet

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IXTJ4N150

Manufacturer Part Number
IXTJ4N150
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTJ4N150

Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
2.5
Rds(on), Max, Tj=25°c, (?)
6
Ciss, Typ, (pf)
1576
Qg, Typ, (nc)
44.5
Trr, Typ, (ns)
900
Pd, (w)
110
Rthjc, Max, (k/w)
1.13
Package Style
ISO TO-247
High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Mounting Torque
50/60 Hz, RM, t = 1min
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 2A, Note 1
≤ V
GS
DS
= 0V
= 0V
DSS
, T
J
GS
≤ 150°C
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTJ4N150
- 55 ... +150
- 55 ... +150
1500
Characteristic Values
Min.
2.5
1.13 / 10
Maximum Ratings
1500
1500
2500
260
±30
±40
350
110
150
300
2.5
Typ.
12
5
2
5
±100 nA
Max.
Nm/lb.in
100 μA
5.0
10 μA
6
V/ns
mJ
V~
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
V
I
R
ISO TO-247
G = Gate
S = Source
Features
Advantages
Applications
D25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
G
D
=
=
≤ ≤ ≤ ≤ ≤
TM
S
D
1500V
2.5A
6
Isolated Tab
Ω Ω Ω Ω Ω
= Drain
DS100449(02/12)

Related parts for IXTJ4N150

IXTJ4N150 Summary of contents

Page 1

... GSS DSS DS DSS 10V 2A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTJ4N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±30 ±40 2 350 ≤ 150° 110 - 55 ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... 7.7 DSS D 12.7 0.30 Characteristic Values Min. Typ. JM 0.9 15.0 6.7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTJ4N150 ISO TO-247 (IXTJ) OUTLINE Max 1.13 °C/W °C/W Max 1.6 A 1.3 V μs A μC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... D 2.6 2.4 2 1.6 1.4 1.2 1.0 0.8 75 100 125 150 4.5 4 3.5 3 2.5 2 1 100 125 150 3.5 IXTJ4N150 Fig. 2. Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Drain Current V = 10V 125º 0.5 1 1 Amperes D Fig. 6. Input Admittance T = 125º ...

Page 4

... IXTJ4N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.4 0.5 0.6 0 Volts SD Fig. 10. Capacitance MHz C iss C oss C rss Volts DS Fig. 12. Forward-Bias Safe Operating Area ...

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