IXTT6N150 IXYS, IXTT6N150 Datasheet

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IXTT6N150

Manufacturer Part Number
IXTT6N150
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTT6N150

Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
3.5
Ciss, Typ, (pf)
2230
Qg, Typ, (nc)
67
Trr, Typ, (ns)
1500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-268
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO247)
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
DSS
, V
, I
, V
D
DD
D
D
= 250μA
= 250μA
GS
= 0.5 • I
≤ V
DS
= 0V
= 0V
DSS
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTT6N150
IXTH6N150
- 55 ... +150
- 55 ... +150
1500
Characteristic Values
Min.
3.0
Maximum Ratings
1.13 / 10
1500
1500
±20
±30
500
540
150
300
260
Typ.
24
6
3
5
4
6
±100 nA
Nm/lb.in.
Max.
250 μA
5.0
3.5
25 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Molding Epoxies Weet UL 94 V-0
Flammability Classification
Fast Intrinsic Diode
Low Package Inductance
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
=
=
≤ ≤ ≤ ≤ ≤
S
G
Tab = Drain
D
S
1500V
6A
3.5
D
D
= Drain
(Tab)
(Tab)
DS100233A(01/12)
Ω Ω Ω Ω Ω

Related parts for IXTT6N150

IXTT6N150 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTT6N150 IXTH6N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±20 ± 500 ≤ 150° 540 - 55 ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... D 20.80 21.46 E 15.75 16.26 e 5.20 L 19.81 20.32 L1 ∅P 3.55 Q 5.89 R 4.32 S 6.15 BSC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTT6N150 IXTH6N150 2,4 - Drain ∅ Drain Inches Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 .084 3.12 .113 .123 .8 .016 .031 ...

Page 3

... DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTT6N150 IXTH6N150 = 25º 10V Value vs 100 125 150 75 100 125 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º Single Pulse 0.1 10 100 V - Volts DS IXTT6N150 IXTH6N150 = - 40ºC 25ºC 125º 25µs 100µs 1ms 10ms 1,000 10,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXTT6N150 IXTH6N150 0.1 1 IXYS REF: T_6N150 (5P)1-19-10 ...

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