IXTF1N250 IXYS, IXTF1N250 Datasheet
IXTF1N250
Specifications of IXTF1N250
Related parts for IXTF1N250
IXTF1N250 Summary of contents
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... GSS 0.8 • DSS DS DSS 10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTF1N250 Maximum Ratings 2500 = 1MΩ 2500 GS ±20 ± 110 - 55 ... +150 150 - 55 ... +150 300 260 20..120 / 4.5..27 2500 5 Characteristic Values Min. ...
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... D25 16 0.21 Characteristic Values Min. Typ 200V 2.5 R DSS 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTF1N250 ISOPLUS i4-Pak Max 1.13 °C/W °C/W Max. 1 1.5 V µs 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...
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... Value vs. D 2.4 2.2 2 0.5A D 1.4 1.2 1.0 0.8 75 100 125 150 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 75 100 125 150 IXTF1N250 Fig. 2. Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Drain Current V = 10V GS 0.0 0.1 0.2 0.3 0.4 0.5 0 Amperes D Fig. 6. Input Admittance 25º 125º 2.8 3.0 3.2 3.4 3.6 3.8 4 Volts GS = 125ºC ...
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... Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance yufgfuy 0.01 Pulse Width - Seconds IXTF1N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.3 0.4 0.5 0 Volts SD Fig. 10. Capacitance f = 1MHz C iss C oss C rss ...