IXFM42N20 IXYS, IXFM42N20 Datasheet

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IXFM42N20

Manufacturer Part Number
IXFM42N20
Description
Standard HiperFETs (50V to 1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXFM42N20

Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
42
Rds(on), Max, Tj=25°c, (?)
0.06
Ciss, Typ, (pf)
4400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-204
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
High dv/dt, Low t
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
TM
DM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
= 250 mA
DSS
= 4 mA
G
, V
= 2 W
DS
= 0
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
TO-204 = 18 g, TO-247 = 6 g
min.
200
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
200
200
±20
±30
168
200
232
300
150
300
42
50
58
42
50
58
30
5
max.
±100
200
4
1 mA
V/ns
mJ
nA
mA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
A
A
A
A
V
V
TO-204 AE (IXFM)
TO-268 (D3) Case Style
G = Gate,
S = Source,
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• High power surface mountable package
• High power density
TO-247 AD (IXFH)
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
200 V
200 V
200 V
V
t
DS (on)
DSS
rr
£ 200 ns
HDMOS
G
D = Drain,
TAB = Drain
42 A 60mW
50 A 45mW
58 A 40mW
S
I
TM
D25
process
S
D
91522H (2/98)
R
DS(on)
(TAB)
G
(TAB)
1 - 4

Related parts for IXFM42N20

IXFM42N20 Summary of contents

Page 1

... GSS 0.8 • V DSS DS DSS IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 TM Family Maximum Ratings 200 = 1 MW 200 GS ±20 ±30 42N20 42 50N20 50 58N20 58 42N20 ...

Page 2

... Pulse test, t £ 300 ms, duty cycle d £ 25A, F -di/dt = 100 A/ms 100 TO-268AA (D PAK) © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM50N20 Characteristic Values Min. Typ. 42N20 50N20 58N20 , pulse test 20 32 4400 800 285 0 DSS ...

Page 3

... D Fig. 5 Drain Current vs. Case Temperature 80 70 58N20 60 50N20 50 42N20 -50 - Degrees C C © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM50N20 V = 10V 15V GS 125 150 175 75 100 125 150 IXFH/IXFM58N20 IXFT50N20 IXFT58N20 Fig ...

Page 4

... V - Volts DS Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20 IXFH/IXFM50N20 Fig.8 Forward Bias Safe Operating Area 100 Limited Fig.10 Source Current vs. Source 0.4 0.001 ...

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