IXFH70N20Q3 IXYS, IXFH70N20Q3 Datasheet

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IXFH70N20Q3

Manufacturer Part Number
IXFH70N20Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFH70N20Q3

Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
3150
Qg, Typ, (nc)
67
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
690
Rthjc, Max, (ºc/w)
0.18
Package Style
TO-247
HiperFET
Power MOSFETs
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 4mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFH70N20Q3
IXFT70N20Q3
200
Characteristic Values
Min.
3.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
± 20
± 30
200
200
210
690
150
300
260
Typ.
1.5
4.0
6.0
70
70
50
±100
Max.
Nm/lb.in.
500 μA
6.5
10
40 mΩ
V/ns
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-268 (IXFT)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
G
DS(on)
D
= 200V
= 70A
≤ ≤ ≤ ≤ ≤
S
and Q
G
Tab = Drain
D
40mΩ Ω Ω Ω Ω
S
G
D
D
= Drain
(Tab)
(Tab)
DS100337(05/11)

Related parts for IXFH70N20Q3

IXFH70N20Q3 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFT70N20Q3 IXFH70N20Q3 Maximum Ratings 200 = 1MΩ 200 GS ± 20 ± 210 JM 70 1.5 ≤ 150° 690 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I 21 DSS D D25 34 0.21 Characteristic Values Min. Typ. JM 10.8 670 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFT70N20Q3 IXFH70N20Q3 TO-268 Outline Max Ω Terminals Gate 3 - Source 0.18 °C/W °C/W Max TO-247 Outline 280 A 1.5 ...

Page 3

... Value vs 25º 100 IXFT70N20Q3 IXFH70N20Q3 Fig. 2. Extended Output Characteristics @ 10V GS 9. Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 100 150º 25ºC C Single Pulse 1 10 100 V - Volts DS IXFT70N20Q3 IXFH70N20Q3 40ºC J 25ºC 125º 100 110 100 25µs 100µs 1ms 1,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFT70N20Q3 IXFH70N20Q3 1 10 IXYS REF: F_70N20Q3(Q6)05-18-11 ...

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