IXFH12N90Q IXYS, IXFH12N90Q Datasheet
IXFH12N90Q
Manufacturer Part Number
IXFH12N90Q
Description
Q-Class HiPerFETs
Manufacturer
IXYS
Datasheet
1.IXFM12N90Q.pdf
(2 pages)
Specifications of IXFH12N90Q
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
0.90
Ciss, Typ, (pf)
2900
Qg, Typ, (nc)
90
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
HiPerFET
Power MOSFETs
Q Class
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated
Low Q
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
DSS
GS(th)
DS(on)
L
DGR
AR
D
J
JM
stg
DSS
GS
GSM
d
g
, High dv/dt
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247 AD
TO-268
S
GS
DS
GS
DS
GS
GS
C
C
C
C
C
J
J
J
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C,
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt £ 100 A/ms, V
, I
D
D
DC
D
= 3 mA
DSS
= 4 mA
G
, V
= 0.5 I
= 2 W
DS
= 0
D25
GS
JM
= 1 MW
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
J
DSS
= 25°C, unless otherwise specified)
,
min.
900
2.5
IXFH 12N90Q
IXFT 12N90Q
-55 ... +150
-55 ... +150
Characteristic Values
1.13/10
300
150
300
typ.
Maximum Ratings
900
900
±20
±30
30
12
48
12
5
6
4
±100
max.
5.5
0.9
50
Nm/lb.in.
1
V/ns
mJ
mA
°C
°C
°C
°C
nA
mA
W
V
V
V
V
V
V
A
A
A
W
g
g
TO-268 (D3) ( IXFT)
G = Gate
S = Source
Features
• IXYS advanced low Q
• Low gate charge and capacitances
• International standard packages
• Low R
• Unclamped Inductive Switching (UIS)
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
V
I
R
t
TO-247 AD (IXFH)
D25
rr
- easier to drive
- faster switching
rated
flammability classification
DSS
DS(on)
£ 200 ns
DS (on)
G
S
= 0.9 W
=
= 900 V
TAB = Drain
D
g
= Drain
process
12 A
98572 (11/98)
1 - 2
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IXFH12N90Q Summary of contents
Page 1
... 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 12N90Q IXFT 12N90Q Maximum Ratings 900 = 1 MW 900 GS ±20 ±30 ...
Page 2
... L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 12N90Q IXFT 12N90Q TO-247 AD (IXFH) Outline Dim. Millimeter Min ...