IXFX32N90P IXYS, IXFX32N90P Datasheet

no-image

IXFX32N90P

Manufacturer Part Number
IXFX32N90P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXFX32N90P

Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.3
Ciss, Typ, (pf)
10600
Qg, Typ, (nc)
215
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
PLUS247
Polar
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
HiPerFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 1mA
GS
= 0.5 • I
DS
= 0V
DSS
= 0V
TM
(PLUS247)
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFK32N90P
IXFX32N90P
20..120 /4.5..27
-55 to +150
-55 to +150
900
3.5
Characteristic Values
Min.
Maximum Ratings
1.13/10
900
900
±30
±40
960
150
300
260
Typ.
32
80
16
15
10
2
6
Max.
±200 nA
Nm/lb.in.
300 mΩ
6.5
25 μA
2 mA
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications
D25
Low R
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
G
D
S
DS(on)
D
S
and Q
= 32A
< 300mΩ Ω Ω Ω Ω
= 900V
D
Tab = Drain
G
= Drain
Tab
Tab
DS100387(9/11)

Related parts for IXFX32N90P

IXFX32N90P Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFK32N90P IXFX32N90P Maximum Ratings 900 = 1MΩ 900 GS ±30 ± ≤ 150° 960 -55 to +150 150 -55 to +150 300 260 1 ...

Page 2

... D25 68 26 215 , I = 0.5 • DSS D D25 98 0.15 Characteristic Values Min. Typ. JM 1.9 14 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK32N90P IXFX32N90P TO-264 Outline Max Ω Millimeter Dim. Min. Max 4.82 5.13 A1 2.54 2. 2.00 2.10 b 1.12 1. ...

Page 3

... GS 2.6 2 1.8 1.4 1.0 0.6 0.2 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFK32N90P IXFX32N90P = 25º 16A Value vs 32A I = 16A D 75 100 125 150 75 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25ºC C Single Pulse 1 10 100 V - Volts DS IXFK32N90P IXFX32N90P 40ºC J 25ºC 125º 200 250 300 25µs 100µs 1ms 1,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13 Maximum Transient Thermal Impedance sdasd 0.001 0.01 Pulse Width - Seconds IXFK32N90P IXFX32N90P 0.1 1 IXYS REF: IXF_32N90P(86) 9-27-11 10 ...

Related keywords