IXFH7N100P IXYS, IXFH7N100P Datasheet

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IXFH7N100P

Manufacturer Part Number
IXFH7N100P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXFH7N100P

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
7
Rds(on), Max, Tj=25°c, (?)
1.9
Ciss, Typ, (pf)
2590
Qg, Typ, (nc)
47
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Polar
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
V
V
V
V
V
Test Conditions
HiPerFET
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 1mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFA7N100P
IXFH7N100P
IXFP7N100P
-55 ... +150
-55 ... +150
1000
Characteristic Values
Min.
3.0
Maximum Ratings
1.13 / 10
1000
1000
±30
±40
300
300
150
300
260
2.5
6.0
3.0
18
10
Typ.
7
7
±100 nA
Nm/lb.in.
1.0 mA
Max.
6.0
1.9
15 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-263 AA (IXFA)
TO-220AB (IXFP)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Power Supplies
DS(on)
DSS
G
DS(ON)
G
D
D S
= 1000V
= 7A
≤ ≤ ≤ ≤ ≤ 1.9Ω Ω Ω Ω Ω
S
and Q
G
S
Tab = Drain
D
D (Tab)
G
D (Tab)
D
= Drain
DS99924B(11/11)
(Tab)

Related parts for IXFH7N100P

IXFH7N100P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved IXFA7N100P IXFP7N100P IXFH7N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ± 300 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1. ...

Page 2

... DSS D D25 21 0.50 0.21 Characteristic Values Min. Typ. JM 0.4 4.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123B1 5,034,796 5,187,117 5,486,715 6,306,728B1 IXFA7N100P IXFA7N100P IXFH7N100P TO-247 Outline Max S Ω Gate 2 = Drain Source 0.42 °C/W °C/W °C/W Max 7 A TO-220 Outline ...

Page 3

... V - Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFH7N100P 3.5A Value vs 3.5A D 100 125 150 100 125 150 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge 500V 3. 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXFH7N100P = - 40ºC 25ºC 125º 0 IXYS REF: F_7N100P(56)9-16-08 ...

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