IXFH15N100Q3 IXYS, IXFH15N100Q3 Datasheet

no-image

IXFH15N100Q3

Manufacturer Part Number
IXFH15N100Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFH15N100Q3

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
1.05
Ciss, Typ, (pf)
3250
Qg, Typ, (nc)
64
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
690
Rthjc, Max, (ºc/w)
0.18
Package Style
TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH15N100Q3
Manufacturer:
LAMBDA
Quantity:
101
HiperFET
Power MOSFETs
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 4mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
IXFH15N100Q3
IXFT15N100Q3
JM
1000
Characteristic Values
Min.
3.5
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
1000
1000
± 30
± 40
690
150
300
260
Typ.
7.5
1.0
4.0
6.0
15
45
50
±100
Max.
1.05
Nm/lb.in.
6.5
1.5 mA
25
V/ns
μA
°C
°C
°C
°C
°C
nA
W
Ω
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-268 (IXFT)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
G
DS(on)
D
= 1000V
= 15A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
and Q
G
Tab = Drain
D
1.05Ω Ω Ω Ω Ω
250ns
S
G
D
D
= Drain
(Tab)
(Tab)
DS100353(06/11)

Related parts for IXFH15N100Q3

IXFH15N100Q3 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFT15N100Q3 IXFH15N100Q3 Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 7.5 1.0 ≤ 150° 690 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I 23 DSS D D25 27 0.21 Characteristic Values Min. Typ. JM 7.6 660 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFT15N100Q3 IXFH15N100Q3 TO-268 Outline Max Ω Terminals Gate 3 - Source 0.18 °C/W °C/W Max TO-247 Outline 60 A 1.4 ...

Page 3

... Value vs 125º 25º IXFT15N100Q3 IXFH15N100Q3 Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS I -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC 7 7 Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 - Volts C iss C oss C rss Volts IXFT15N100Q3 IXFH15N100Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 500V 7. 10mA ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFT15N100Q3 IXFH15N100Q3 1 10 IXYS REF: F_15N100Q3(Q6) 6-28-11 ...

Related keywords