IXFH15N100Q3

Manufacturer Part NumberIXFH15N100Q3
DescriptionQ3-Class HiPerFETs
ManufacturerIXYS
IXFH15N100Q3 datasheet
 


Specifications of IXFH15N100Q3

Vdss, Max, (v)1000Id(cont), Tc=25°c, (a)15
Rds(on), Max, Tj=25°c, (?)1.05Ciss, Typ, (pf)3250
Qg, Typ, (nc)64Trr, Typ, (ns)-
Trr, Max, (ns)250Pd, (w)690
Rthjc, Max, (ºc/w)0.18Package StyleTO-247
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HiperFET
TM
Power MOSFETs
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, Pulse Width Limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dv/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062in.) from Case for 10s
L
T
Plastic Body for 10 seconds
sold
M
Mounting Torque (TO-247)
d
Weight
TO-268
TO-247
Symbol
Test Conditions
(T
= 25°C Unless Otherwise Specified)
J
BV
V
= 0V, I
= 1mA
DSS
GS
D
V
V
= V
, I
= 4mA
GS(th)
DS
GS
D
= ±30V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
, V
= 0V
DSS
DS
DSS
GS
R
V
= 10V, I
= 0.5 • I
DS(on)
GS
D
D25
© 2011 IXYS CORPORATION, All Rights Reserved
Advance Technical Information
IXFT15N100Q3
IXFH15N100Q3
Maximum Ratings
1000
= 1MΩ
1000
GS
± 30
± 40
15
45
JM
7.5
1.0
≤ 150°C
50
J
690
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4.0
6.0
Characteristic Values
Min.
Typ.
1000
3.5
T
= 125°C
J
, Note 1
V
= 1000V
DSS
I
= 15A
D25
1.05Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
250ns
≤ ≤ ≤ ≤ ≤
t
rr
TO-268 (IXFT)
G
S
V
TO-247 (IXFH)
V
V
V
A
G
A
D
S
A
J
G = Gate
D
S = Source
Tab = Drain
V/ns
W
°C
°C
Features
°C
Low Intrinsic Gate Resistance
°C
International Standard Packages
°C
Low Package Inductance
Fast Intrinsic Rectifier
Nm/lb.in.
Low R
and Q
DS(on)
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Max.
V
Applications
6.5
V
DC-DC Converters
±100
nA
Battery Chargers
Switch-Mode and Resonant-Mode
μA
25
Power Supplies
1.5 mA
DC Choppers
Temperature and Lighting Controls
Ω
1.05
D
(Tab)
D
(Tab)
= Drain
G
DS100353(06/11)

IXFH15N100Q3 Summary of contents

  • Page 1

    ... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFT15N100Q3 IXFH15N100Q3 Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 7.5 1.0 ≤ 150° 690 -55 ... +150 150 -55 ... +150 300 260 1 ...

  • Page 2

    ... I 23 DSS D D25 27 0.21 Characteristic Values Min. Typ. JM 7.6 660 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFT15N100Q3 IXFH15N100Q3 TO-268 Outline Max Ω Terminals Gate 3 - Source 0.18 °C/W °C/W Max TO-247 Outline 60 A 1.4 ...

  • Page 3

    ... Value vs 125º 25º IXFT15N100Q3 IXFH15N100Q3 Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS I -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

  • Page 4

    ... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC 7 7 Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 - Volts C iss C oss C rss Volts IXFT15N100Q3 IXFH15N100Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 500V 7. 10mA ...

  • Page 5

    ... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFT15N100Q3 IXFH15N100Q3 1 10 IXYS REF: F_15N100Q3(Q6) 6-28-11 ...