IXTT2N170D2 IXYS, IXTT2N170D2 Datasheet

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IXTT2N170D2

Manufacturer Part Number
IXTT2N170D2
Description
D2 Depletion Mode Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTT2N170D2

Vds, Max, (v)
1700
Id(on), Min, (a)
2.0
Rds(on), Max, (?)
6.5
Vgs(off), Max, (v)
-4.0
Ciss, Typ, (pf)
3650
Crss, Typ, (pf)
80
Qg, Typ, (nc)
110
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
TO-268
Depletion Mode
MOSFETs
N-Channel
Symbol
V
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2012 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
DGX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
V
V
V
V
V
V
Test Conditions
J
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 1A, Note 1
= 250μA
= 250μA
GS
= 50V, Note 1
DS
= - 5V
= 0V
GS
= 1MΩ
T
J
= 125°C
IXTH2N170D2
IXTT2N170D2
- 2.0
- 55 ... +150
- 55 ... +150
Min.
1700
2
Characteristic Values
Maximum Ratings
1.13 / 10
1700
1700
±20
±30
568
150
300
260
Typ.
4
6
±100 nA
- 4.0
Nm/lb.in.
500 μA
Max.
6.5
25 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
V
A
g
g
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D
≤ ≤ ≤ ≤ ≤
=
>
S
G
Tab = Drain
D
S
6.5Ω Ω Ω Ω Ω
2A
1700V
D
D
= Drain
(Tab)
(Tab)
DS100418B(02/12)

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IXTT2N170D2 Summary of contents

Page 1

... DSX(off) DS DSX 0V 1A, Note 1 DS(on 0V 50V, Note 1 D(on © 2012 IXYS CORPORATION, All Rights Reserved IXTT2N170D2 IXTH2N170D2 Maximum Ratings 1700 = 1MΩ 1700 GS ±20 ±30 568 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. 1700 - 2 ...

Page 2

... Characteristic Values Min. Typ. = 75° 204 C Characteristic Values Min. Typ. 0.75 2.8 45.0 63.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTT2N170D2 IXTH2N170D2 TO-268 Outline Max Terminals Gate Source 0.22 °C/W °C/W Max. W TO-247 Outline Max. 1.30 ...

Page 3

... J 100,000 0. 1.0V 10,000 - 1.2V - 1.4V - 1.6V - 1.8V 1,000 - 2.0V 100 IXTT2N170D2 IXTH2N170D2 Fig. 2. Extended Output Characteristics @ Volts DS Fig. 4. Drain Current @ Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage T = 25º 100ºC J -2.0 -1.8 -1 ...

Page 4

... Value 2 1 2.5 3 3 40ºC J 1.2 25ºC 1.1 125ºC 1.0 0.9 0.8 2 2.5 3 3.5 -50 IXTT2N170D2 IXTH2N170D2 Fig. 8. Normalized R vs. Junction Temperature DS(on - Degrees Centigrade J Fig. 10. Input Admittance V = 30V 125ºC J 25ºC - 40ºC -2 Volts GS Fig ...

Page 5

... R DS(on) 1ms 1 10ms T J 100ms Single Pulse 0.1 1,000 10,000 10 IXTT2N170D2 IXTH2N170D2 Fig. 14. Capacitance MHz Fig. 17. Maximum Transient Thermal Impedance V - Volts DS Fig. 16. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds Fig. 18. Forward-Bias Safe Operating Area @ T = 75º ...

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