IXTT500N04T2 IXYS, IXTT500N04T2 Datasheet

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IXTT500N04T2

Manufacturer Part Number
IXTT500N04T2
Description
TrenchT2 MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTT500N04T2

Vdss, Max, (v)
40
Id(cont), Tc=25°c, (a)
500
Rds(on), Max, Tj=25°c, (?)
0.0016
Ciss, Typ, (pf)
25000
Qg, Typ, (nc)
405
Trr, Typ, (ns)
84
Pd, (w)
1000
Rthjc, Max, (k/w)
0.15
Package Style
TO-268
TrenchT2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TO-247
TO-268
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 1mA
= 250μA
= 100A, Notes 1 & 2
GS
DS
= 0V
= 0V
GS
= 1MΩ
Advance Technical Information
T
J
= 150°C
IXTH500N04T2
IXTT500N04T2
JM
Characteristic Values
Min.
40
1.5
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10
1250
1000
± 20
500
160
100
800
175
300
260
Typ.
40
40
6
4
±200
Max.
Nm/lb.in.
750 μA
1.6 mΩ
3.5
10
mJ
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
A
A
A
A
V
V
g
g
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Diode
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Synchronous Buck Converters
High Current Switching Power
Battery Powered Electric Motors
Resonant-Mode Power Supplies
Electronics Ballast Application
Class D Audio Amplifiers
Supplies
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
DS(on)
D
= 40V
= 500A
≤ ≤ ≤ ≤ ≤
S
G
D
Tab = Drain
1.6mΩ Ω Ω Ω Ω
S
D (Tab)
D (Tab)
= Drain
DS100218(12/09)

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IXTT500N04T2 Summary of contents

Page 1

... DSS DS DSS 10V 100A, Notes 1 & 2 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH500N04T2 IXTT500N04T2 Maximum Ratings 40 = 1MΩ ± 20 500 160 1250 JM 100 800 1000 -55 ... +175 175 -55 ... +175 300 260 1. Characteristic Values Min ...

Page 2

... DSS D D25 118 0.21 Characteristic Values Min. Typ 3.1 130 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH500N04T2 IXTT500N04T2 TO-247 (IXTH) Outline Max Ω Terminals Gate 3 - Source ns Dim. Millimeter nC Min ...

Page 3

... J 2.0 7V 1.8 6V 1.6 1.4 1.2 5V 1.0 4V 0.8 3V 0.6 0.6 0.7 0.8 0.9 1.0 180 160 T = 175ºC J 140 120 100 T = 25ºC J 250 300 350 400 IXTH500N04T2 IXTT500N04T2 Fig. 2. Extended Output Characteristics @ 15V GS 10V 0.0 0.5 1.0 1 Volts DS Fig Normalized vs. Junction Temperature DS(on 10V GS I < 500A D -50 - ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4.0 4.5 5.0 5 25ºC J 0.8 0.9 1.0 1.1 10,000 1,000 C iss C oss C rss Volts IXTH500N04T2 IXTT500N04T2 Fig. 8. Transconductance 240 200 160 120 100 120 140 I - Amperes D Fig. 10. Gate Charge 20V ...

Page 5

... R = 1Ω 10V 110 G GS 400 V = 20V DS 100 300 90 200 80 100 140 160 180 200 IXTH500N04T2 IXTT500N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 20V 125º 25º 100 120 140 I - Amperes D Fig ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance dfafas 0.001 0.01 Pulse Width - Seconds IXTH500N04T2 IXTT500N04T2 0.1 1 IXYS REF: T_500N04T2(98)12-09-09 10 ...

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